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TranslationMobile

"electron" in Chinese : n. 【物理學(xué)】電子。 the electron bea ...
"electron hole recombination" in Chinese : 電子空穴復(fù)合; 電子空穴復(fù)合
"electron ion recombination" in Chinese : 電子離子復(fù)合; 電子離子復(fù)合
"electron-hole recombination" in Chinese : 電子空穴復(fù)合
"ion electron recombination" in Chinese : 離子電子再化合
"recombination of ion and electron" in Chinese : 離子電子復(fù)合
"recombination" in Chinese : 沖調(diào)；復(fù)水; 復(fù)合再化合; 恢愎; 再結(jié)合; 重結(jié)合; 重新結(jié)合; 重新組合 ...
"electron" in Chinese : n. 【物理學(xué)】電子。 the electron beam 電子束。 the ...
"s electron" in Chinese : s電子
"additive recombination" in Chinese : 插入重組; 加插重組
"anionoid recombination" in Chinese : 陰離子催化聚合
"atomic recombination" in Chinese : 原子復(fù)合
"attachement recombination" in Chinese : 附著復(fù)合
"auger recombination" in Chinese : 俄歇覆合; 俄歇復(fù)合
"bacterial recombination" in Chinese : 細(xì)菌重組

The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed , which was a possible alternative to achieve color display . 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated . when the balq3 dopant concentration was about 25 mol % , a high performance devcie with luminous efficiency of 1 . 0 lm / w , the peak of emission spectrum at 440 nm , the cie coordinate at ( 0 . 18 , 0 . 15 ) , and half lifetime of unencapsulated device about 950 hrs was achieved
導(dǎo)致本現(xiàn)象的原因是由于各有機層電場強度的變化影響了空穴和電子的隧穿幾率,從而導(dǎo)致載流子的復(fù)合區(qū)域發(fā)生改變而發(fā)出不同顏色的光; 3 )制備了結(jié)構(gòu)為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ,空穴阻擋材料balq3的摻入顯著影響了oled的光電性能,當(dāng)balq3的摻雜濃度為25mol %時, oled的發(fā)光效率為1 . 0lm / w ,發(fā)光光譜的峰值為440nm ,色純度為( 0 . 18 , 0 . 15 ) ,未封裝器件的半衰期達到了950小時; 4 )在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時,不僅改善了器件的發(fā)光亮度和色純度,而且提高了器件的發(fā)光效率和壽命。